LH28F320S3TD-L10
292 K (298,389 bytes)
32 M-bit (2 MB x 8/1 MB x 16 x 2-Bank) Smart 3 Dual Work Flash Memory
Description
The LH28F320S3TD-L10 Dual Work flash memory with Smart 3 technology is a high-density, low-cost, nonvolatile, read/write storage solution for a wide range of applications, having high programming performance is achieved through highly-optimized page buffer operations. Its symmetrically-blocked architecture, flexible voltage and enhanced cycling capability provide for highly flexible component suitable for resident flash arrays, SIMMs and memory cards. Its enhanced suspend capabilities provide for an ideal solution for code + data storage applications.
For secure code storage applications, such as networking, where code is either directly executed out of flash or downloaded to DRAM, the LH28F320S3TD-L10 offers three levels of protection : absolute protection with Vpp at GND, selective hardware block locking, or flexible software block locking. These alternatives give designers ultimate control of their code security needs.
LH28F320S3TD-L10 is conformed to the flash Scalable Command Set (SCS) and the Common Flash Interface (CFI) specification which enable universal and upgradable interface, enable the highest system/device data transfer rates and minimize device and system-level implementation costs.
Features
- Smart 3 Dual Work technology
- 2.7 V or 3.3 V Vcc
- 2.7 V, 3.3 V or 5 V Vpp
- Capable of performing erase, write and read for each bank independently (Impossible to perform read from both banks at a time).
- High-speed write performance
- Two 32-byte page buffers/bank
- 2.7 µs/byte write transfer rate
- Common Flash Interface (CFI)
- Universal & upgradable interface
- Scalable Command Set (SCS)
- High performance read access time
- 100 ns (3.3±0.3 V)/120 ns (2.7 to 3.6 V)
- Enhanced automated suspend options
- Write suspend to read
- Block erase suspend to write
- Block erase suspend to read
- Enhanced data protection features
- Absolute protection with Vpp = GND
- Flexible block locking
- Erase/write lockout during power transitions
- SRAM-compatible write interface
- User-configurable x8 or x16 operation
- High-density symmetrically-blocked architecture
- Sixty-four 64 k-byte erasable blocks
- Enhanced cycling capability
- 100 000 block erase cycles
- 3.2 million block erase cycles/bank
- Low power management
- Deep power-down mode
- Automatic power saving mode decreases Icc in static mode
- Automated write and erase
- Command user interface
- Status register
- ETOX™* V nonvolatile flash technology
- Package
- 56-pin TSOP Type I (TSOP056-P-1420)
* ETOX is a trademark of Intel Corporation.
General Description for Sharp Flash Memories 73 K (73,770 bytes)
Quality Assurance 84 K (85.388 bytes)
